j MJ16014 description ? collector-emitter sustaining voltage- :vceo(sus) = 450v(min) ? high switching speed applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25c) thermal characteristics symbol vcev vceo(sus) vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation@tc=25c junction temperature storage temperature value 850 450 6 20 30 10 20 250 200 -65-200 unit v v v a a a a w c ?c symbol rth j-c parameter thermal resistance, junction to case max 0.7 unit c/w 3 j pin t.base 1 p 2, emitter ^*\. collect or (case) 2 to-3 package u v? t (?- n-?^ ' ' 1 -4?d *? u ? * |^l~ s^\\^ \^^^ '?-^3 1 t j c ifi. / \l dim min max a 3900 b 25.30 c 9.30 d 0.90 e 2.90 26.67 11.10 1.10 3.10 g 1092 h 546 ^ 11.40 l 16,75 n 19.40 0_ 400 u 3000 v 430 13.50 17.05 19.62 420 3020 4,50 : i3s t ; b | nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor MJ16014 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vse(sat) icev icer iebo hfe cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain output capacitance conditions lc=100ma; ib=0 ic=10a; ib=1-3a lc=15a; ib=2a ic=15a;ib=2a,tc=100-c ic=15a;ib=2a ic=15a;ib=2a,tc=100'c vcev=850v;vbe(off)=1.5v vcev=850v;vbe(off)=1 .5v;tc=1 oo'c vce= 850v; rbe= 50 q ,tc= 100'c veb= 6v; lc=0 lc= 20a ; vce= 5v le=0;vcb=10v;ftest=1.0khz min 450 5 typ. max 2.5 3.0 3.0 1.5 1.5 0.25 1.5 2.5 1.0 500 unit v v v v ma ma ma pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc= 15a,vcc= 250v, rb2= 1.6 q duty cycle =s2.0% 20 200 1200 200 50 500 2700 350 ns ns ns ns
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